WebMar 1, 2000 · Recent experimental results [1], [2] showed that (i) the FPD was identified with the crystal originated particle (COP), and (ii) the COP was confirmed to be the void defect. These results indicate that the nucleus of FPD should be the void defect. Download : Download full-size image Fig. 1. WebThe active layer has no COP (Crystal Originated Particle or Pits) by epitaxial growth. The buried oxide is thermally grown on epitaxial Si layers and has no pinholes. We have successfully expanded the wafers to 300-mm (12-inch) diameter, in which SOI-thickness-uniformity of ±1.1% was even better than 8 inch Keywords Porous Silicon Epitaxial Layer
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WebOct 1, 1997 · To clarify the influence of crystal-originated "particles" (COPs) on gate oxide integrity (GOI), a new GOI evaluation method has been developed. This method … WebDec 15, 1995 · Microstructure shape of “crystal-originated particles” (COP's) on mirror-polished silicon wafers (a) as received, (b) cleaned with NH4OH/H2O2/H2O solution (SC-1), and (c) annealed at high temperature (∼1150° C) in O2/N2 mixture or in H2, were observed using a scanning electron microscope (SEM), transmission electron microscope (TEM) … bind dynamic radio button list
Characterization of Crystal Quality by Crystal Originated Particle Delinea…
WebFeb 26, 2013 · Crystal-originated particles on performance for Nano-generation IC process Abstract: In this work, we present crystal-originated particles (COPs) always created on … WebApr 27, 2008 · Abstract: The effects of crystal-originated particles (COPs) on ultra-thin gate oxide for recent ultra large-scale integration (ULSI) devices were studied. WebJan 15, 2000 · Abstract The presence of crystal originated particle (COP) on the 64 Mbyte dynamic random access memory (DRAM) device isolation region causes the current path between neighboring transistors,... bind eacces 0.0.0.0:1337